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O2 Plasma Stripper (Asher)

Application

Operating Principle

Using a plasma source, a monatomic

reactive species is generated. Oxygen is

the most common reactive species. The

reactive species combines with the photo

resist to form ash which is removed with a

vacuum pump.

ICP configuration avoids energetic ion

bombardment ａnd capacitive coupling,

providing low substrate damage.

Gases Available

O2

N2O

Key Features

• The open-load design allows

fast wafer loading ａnd

unloading.

• Substrate is placed on a quartz

to avoid sputtering/re

deposition of electrode material

• Gas injected into process

chamber via “showerhead” gas

inlet in the top electrode

• Separate RF generators for ICP ａnd

electrode provide separate control

over ion energy ａnd ion density

• High conductance pumping port

provides high gas throughput for

fastest etch rates